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?氮化鎵是一種具有較大禁帶寬度的半導體，屬于所謂寬禁帶半導體之列。它是微波功率晶體管的優(yōu)良材料，也是藍色光發(fā)光器件中的一種具有重要應用值的半導體。

? ?Gallium nitride is a semiconductor with a large band gap, which belongs to the so-called wide band gap semiconductor. It is an excellent material for microwave power transistor and a kind of semiconductor with important application value in blue light emitting devices.

?氮化鎵（GaN）是鎵和氮的化合物，是一種具有寬帶隙和剛性六萬晶體 的半導體材料，帶隙是從周圍軌道中釋放電子所需的能量原子核，在3.4ev時，氮化鎵的帶隙是硅的三倍以上。由于帶隙材料可以控制的電場，因此氮化鎵更大的帶隙使得制造耗盡區(qū)非常短或窄的半導體成為可能，從而實現(xiàn)具有極高載流子密度的器件設計，更小的晶體管和更短的電流通道，使速度提高多達100倍。

?Gallium nitride(GaN),a compound of?gallium and nitrogen ,is a semiconductor material with a broad bandgap and a rigid hexagonal crystal structure.The bandgap is the energy neceessary to liberate electrons from orbits around the nucleus,and at 3.4 eV gallium nitride has a bandgap that is more than three times that of silicon.Because the bandgap controls the electric field that a material can withstand, gallium nitride's greater bandgap enables the fabricatior of semiconductors with very short or narrow depletion zones, resulting in device designs with extremely high carrier densities.Ultra-low resistance and capacitance are achieved with considerably smaller transistors and shorter current channels, enabling speeds up to 100 times quicker.

?GaN技術可以在標準硅小的得多的外形尺寸下管理巨大的電場，同時還提供明顯更快的開關。此外，GaN及時的提高工作溫度高于硅基技術。GaN爭正變得越來越重要，因為塔可以廣泛的應用中明顯提高性能，同時比傳統(tǒng)的硅技術消耗更少的能量和占用更少的物理空間。

?The basic line is that GaN technology can manage enormous electric fields in a considerably smaller form factor than standard silicon,while also delivering considerably faster switching. Furthermore, GaN technology has a higher maximum operating temperature than silicon-based technology.GaN is becoming more relevant because it may give dramatically increased performance across a wide range of applications while consuming less energy and taking up less physical space than traditional silicon technology.